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PD -97151 IRFH7934PBF Applications l l HEXFET(R) Power MOSFET Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS(on) max Qg 3.5m:@VGS = 10V 20nC Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering D D D D S S S G PQFN 5X6 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 20 24 19 76 190 3.1 2.0 0.025 -55 to + 150 Units V A g Power Dissipation g Power Dissipation c W W/C C Linear Derating Factor Operating Junction and g Storage Temperature Range Thermal Resistance Parameter RJC RJA Junction-to-Case f Typ. --- --- Max. 2.9 40 Units C/W Junction-to-Ambient g ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 2/11/09 1 IRFH7934PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 --- --- --- 1.35 --- --- --- --- --- 110 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 2.9 4.2 1.8 -6.5 --- --- --- --- --- 20 4.8 2.5 6.3 6.4 8.8 15 1.7 12 16 14 7.5 3100 623 241 --- --- 3.5 5.1 2.35 --- 1.0 150 100 -100 --- 30 --- --- --- --- --- --- 3.1 --- --- --- --- --- --- --- Typ. --- --- pF ns nC nC VDS = 15V VGS = 4.5V ID = 19A V Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A V/C Reference to 25C, ID = 1mA m V mV/C A nA S e e VDS = VGS, ID = 50A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 19A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 19A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Max. 97 19 Units mJ A Avalanche Characteristics EAS IAR d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 20 28 3.9 A 190 1.0 30 42 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 19A, VGS = 0V TJ = 25C, IF = 19A, VDD = 15V di/dt = 325A/s e eASee Fig.16 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFH7934PBF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 10 2.7V 2.7V 1 0.1 1 60s PULSE WIDTH Tj = 25C 10 100 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 24A 100 VGS = 10V 1.5 TJ = 150C 10 1 TJ = 25C 1.0 0.1 VDS = 15V 60s PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFH7934PBF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 14 12 10 8 6 4 2 0 ID= 19A VDS= 24V VDS= 15V C, Capacitance (pF) 10000 Ciss 1000 Coss Crss 100 1 10 100 0 10 20 30 40 50 60 70 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 DC 1 1msec ISD, Reverse Drain Current (A) 100 TJ = 150C 10 TJ = 25C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 TA = 25C Tj = 150C Single Pulse 0.1 1 10msec 0.1 10 100 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFH7934PBF 25 20 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 15 ID = 50A 1.6 10 5 1.2 0 25 50 75 100 125 150 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ , Ambient Temperature (C) TJ , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 D = 0.50 Thermal Response ( ZthJC ) 10 1 0.20 0.10 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 0.1 1 2 3 4 4 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 6.955975 0.065034 15.08336 5.307554 1.818966 0.00141 16.08526 0.757022 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFH7934PBF ( RDS (on), Drain-to -Source On Resistance m) 14 ID = 24A 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 EAS, Single Pulse Avalanche Energy (mJ) 400 300 ID 2.5A 3.7A BOTTOM 19A TOP 200 TJ = 125C TJ = 25C 100 0 25 50 75 100 125 150 VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS VGS RD VDS L DRIVER RG V10V GS Pulse Width 1 s Duty Factor 0.1 D.U.T. + -VDD RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 6 www.irf.com IRFH7934PBF D.U.T Driver Gate Drive Period D= P.W. Period VGS=10V + P.W. + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Current Regulator Same Type as D.U.T. Vds Vgs Id 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform www.irf.com 7 IRFH7934PBF PQFN Package Details Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH7934PBF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRFH7934PBF Orderable part number IRFH7934TRPBF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Note guidelines ) MS L2 PQFN 5mm x 6mm (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.535mH, RG = 25, IAS = 19A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/2009 10 www.irf.com |
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